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| smd type www.kexin.com.cn 1 diodes 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 sillicon epitaxial schottky barrier diode 1SS351 features series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller. small interterminal capacitance (c=0.69pf typ). small forward voltage (v f =0.23v max). absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 5v forward current i f 30 ma junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit forward voltage v f i f = 1 ma 0.23 v forward current i f v f =0.5v 30 ma reverse current i r v r =0.5v 25 a interterminal capacitance c v r = 0.2 v, f = 1 mhz 0.69 0.9 pf marking marking ch
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